Busan Metropolitan City announced that the “2026 Power Up WBG Semiconductor Workshop (Subtitle: Korea–China–Japan Wide Bandgap Semiconductor Materials and Applied Devices Workshop)” will be held for three days from today (the 28th) through January 30 at Jangbogo Hall, Daeyeon Campus, Pukyong National University.
Wide bandgap (WBG) semiconductors, based on representative materials such as gallium nitride (GaN) and silicon carbide (SiC), are next-generation semiconductors that offer higher power efficiency than conventional silicon (Si) semiconductors and operate stably even in high-temperature and high-power environments.
The workshop is co-hosted by Busan Metropolitan City and Pukyong National University, with the participation of around 50 experts from industry, academia, research institutes, and government in the wide bandgap semiconductor field from Korea, China, and Japan. Participants will discuss cooperation strategies to secure global technological leadership.
In particular, on the second day of the workshop (the 29th), researchers in key fields such as silicon carbide (SiC), gallium nitride (GaN), and diamond—materials attracting attention as next-generation semiconductor materials—will participate in in-depth academic programs.
In the gallium nitride (GaN) field, Professor Kamiyama Satoshi of Meijo University and Professor Iwaya Motoaki, both disciples of Nobel laureate Akasaki Isamu, will present their research achievements on next-generation GaN-based optoelectronic devices.
Professor Harada Shunta of the IMaSS Institute at Nagoya University, led by Nobel laureate Amano Hiroshi, will share the latest research trends in silicon carbide (SiC) power semiconductor materials.
In addition, Japanese semiconductor materials company Orbray will introduce the development status of “diamond semiconductor wafers,” while Xiamen University and Hangzhou Dianzi University from China, together with Pukyong National University and the Korea Institute of Ceramic Engineering and Technology, will share research trends in next-generation semiconductor materials and devices.
Based on the “Comprehensive Plan for Fostering the Semiconductor Industry” established in 2024, Busan Metropolitan City plans to further concretize its ongoing cooperative relationships with institutions such as Nagoya University and Meijo University in Japan through this workshop. Along with Japan, a strong country in materials, components, and equipment, and China, which possesses competitive related technologies, the city aims to strengthen a global semiconductor “triangular network.”
Furthermore, based on the discussions held during the workshop, Busan Metropolitan City plans to promote the establishment of an international joint research center centered on Busan’s power semiconductor specialized complex and to gradually prepare practical measures for industrial development.
Mayor Park Heong-joon stated, “I hope this workshop will serve as a catalyst for Busan to be reborn as a hub of the global power semiconductor market,” adding, “We will do our utmost to elevate Busan’s semiconductor ecosystem to a world-class level through cross-border technological innovation.”
This content has been translated by AI. Please refer to the attached original Korean version for accuracy if needed.
Translated by AI
Link to Busan press releases in Korean